| 摘要 |
PURPOSE:To control the starting time of a crystal growth by a method wherein a concavity in which a substrate is inserted is closed or opened by operating a rod from outside a reaction tube and also a boat is moved. CONSTITUTION:A substrate 3 is set, inserted in a reaction tube 6, and after substituting the tube thoroughly inside, a cover 4 is placed on the substrate 3 to close up tightly by operating a rod 5. After temperature rise Cl2 6F, 6G and arsine 6H are let in. After a given period of time, the cover 4 is removed by operating the rod 5, and the substrate 3 is contacted with reaction gas to start growth. The growth is stopped by placing the cover 4 on the substrate 3, the reaction gas is stopped to temperature drop, and thus the growth of one layer comes to completion. Since a crystal growth can be allowed free from a transient change of the reaction gas according to this constitution, crystallinity is secured good around the surface and a lattice constant makes less change. A thin growth layer is obtainable consequently, and a growth in multilayer and sharp in impurity density change is also obtainable. |
