| 摘要 |
PURPOSE:To improve effect of a protecting film by arranging one of P-N junctions exposed in a groove on a semiconductor substrate surface in a different-in-level structure getting deep toward the groove. CONSTITUTION:A P type impurity is diffused to an N type Si substrate 1 to form PE layer 2 and PB layer 3, an etching groove 21 is provided on the layer 3, and NE layer 4 is formed through selective diffusion including the groove 21. Then, after grooves 5, 6 reaching junctions 8, 9 are formed, a glass 7 is buried therein. A thermally oxidized film 12 is provided on the junction 8 exposed to the surface, and an electrode is attached to a necessary part to completion. According to this constitution, since PB-NE junction is not present near the main surface, PB-NB, NB-PE junctions and also PBNE junction are protected thoroughly by the glass despite the glass being missing near the surface, and thus a reliability of the device can be improved. |
