| 摘要 |
PURPOSE:To obtain a metal layer of a desired pattern under high temperatures by a method wherein a main concavity of a given pattern is formed on a substrate itself with SiO2 working as a mask and an auxiliary concavity adjacently thereto through etching each, and after providing the metal layer in the concavities, the SiO2 mask is removed. CONSTITUTION:SiO2 12 and a resist 13 are laminated on a substrate 11, an electron beam 14 is irradiated thereto to obtain a given pattern formation 15 and auxiliary pattern formations 16 adjacently thereto. The main concavity 17 and the auxiliary concavities 18 are formed through etching, and a metal layer 19 of Nb is formed at temperature 200 deg.C or over. Next, from etching SiO2 12, both the main concavity and the auxiliary concavities are ready for etching therefrom, thus removing it quickly and easily. According to this constitution, undercut is not necessary for the resist 13 to form a pattern of mask layer, an excessive irradiation is not necessary at the time of patterning, a fine pattern can be formed, and SiO2 mask which involves a hardship for removal ever before can also be removed quickly. |
