| 摘要 |
PURPOSE:To prevent interlayer short circuit and obtain a multilayer wiring of high reliability by placing the layer of high melting point metal or silicon compound thereof between an insulation film and a wiring layer. CONSTITUTION:The insulation film 3 is formed to cover the wiring 2 on an Si substrate 1 and the thin film 6, for instance, of Mo or the silicone compound of Mo is provided between the film 3 and the 2nd-layer wiring 4. The high-mp metal such as Mo is generally inactive and therefore causes no short circuit between layers even if there is any defect 5 in the insulation film 3. In addition, it is not damaged even by the rise of temperature on the occasion of forming of the wire 4, no crystal grows gross therein, and no breaking of wire is caused. By this constitution, a highly-reliable and stable multilayer wiring structure is obtained. |
