发明名称 MANUFACTURE OF SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To prevent damage and also to improve yield by a method wherein an identifying mark is formed in an untouched manner on a part of semiconductor substrate through photoengraving, and then a desired treatment is applied on the substrate. CONSTITUTION:At a position 2 notches 4 of the substrate 1 are contacted to pins 3, 3', a pin 3'' is contacted to a periphery of the substrate to rough locating, and then it is brought to an exposure position 2'. There arises a dead domain 7 of a pattern 6 of a photomask 5 on the periphery of the substrate. Therefore an indication 8 is exposed in the dead domain at the position 2 by controlling 12 a projector 11. Next, a precise locating is made at the position 2', and the pattern 6 of the mask 5 is exposed. Processes of development, etching and resist removal follow thereafter. According to this constitution, a mark can be formed together with a given pattern without damaging the surface of the substrate.
申请公布号 JPS5656633(A) 申请公布日期 1981.05.18
申请号 JP19790132732 申请日期 1979.10.15
申请人 FUJITSU LTD 发明人 TABUCHI SHIYUUJI
分类号 H01L21/02;H01L21/30 主分类号 H01L21/02
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