发明名称 INSULATION POST IN SEMICONDUCTOR DEVICE
摘要 PURPOSE:To avoid the sticking of a brazing material to a wire bonded to an electroconductive plate by a method wherein the edge of the back corner part of the electroconductive plate is cut and the edge part is formed to be obtuse or arc-shaped when a lead formed of the electroconductive plate is brazed to a stem plate through the intermediary of an insulation plate. CONSTITUTION:Two insulation plates 1 formed of ceramic are fixed on to the stem plate 5 at a prescribed interval, and the leads 8 of electroconductive plates are brazed to the plates 1, while being extended outside, by using the brazing material 2 of Ag. Next, the part on the collector side of an Si pellet 9 is fixed on the substrate between the insulation plates 1 opposed to each other and a base and an emitter electrode provided on the part are bonded to the lead 8, by using a wire 4, thus to form a transistor. In this constitution, at the edge part on the side of the lead 8 contacting with the insulation plate 1 is provided the obtuse or arc-shaped corner part by cutting, and the brazing material 2 is fitted to this side. By this method, the sticking of the brazing material 2 to the front surface of the lead 8 is avoided and thereby the inferior bonding is prevented.
申请公布号 JPS5656661(A) 申请公布日期 1981.05.18
申请号 JP19790131876 申请日期 1979.10.15
申请人 发明人
分类号 H01L21/60;H01L23/49;H01L23/492 主分类号 H01L21/60
代理机构 代理人
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