| 摘要 |
PURPOSE:To eliminate a cavity and improve the yield by a method wherein two thin multicrystal Si layers are employed, the ion is implanted through these layers to form a diffused region and also the resistance value of the multicrystal Si layers are lowered in the manufacture of C-MOSIC wherein the multicrystal Si is used for a gate electrode. CONSTITUTION:A P<-> type region 16 is formed diffusely on an N type Si substrate 15 and in the part around the region 16 and on the surface apart therefrom a thick field oxide film 17 is provided, while on the surface surrounded thereby a thin gate oxide film 18 is fitted. Next, a window is opened in a prescribed position of the film 18, a multicrystal Si layer 19 and a thin multicrystal Si layer 20 are laminated and piled on the whole surface, the region 16 is covered with a mask of SiO2 film 21, ions of impurities are injected and later heat treatment is applied, and thus a P<+> type region 22 is formed within the substrate 15 on both sides of the remaining film 18. After that, the film 21 is removed, a mask of SiO2 film 23 is provided on the region 22, ions are implanted in the same way as the above to form an N<+> type region 24 within the region 16, while an electroconductivity is given to the layers 19 and 20 respectively. |
