| 摘要 |
PURPOSE:To obtain a fine pattern by a method wherein a photoresist is placed upon the first pattern of the photoresist and then the second pattern is formed partly intersecting therewith. CONSTITUTION:From carrying out exposure and development according to a photoresist 3 are ever before, a mask pattern in the limit of 3-5mum is obtainable through resolving power of the photoresist and diffraction of the light. Further the photoresist is laminated, and a mask pattern 5 is formed, which is slightly shifted to intersect partly with the lower layer of mask pattern 3 at 1-3mum. According to this method, an oxidized film 2 can be exposed with a fine pattern coming in 1-3mum, and the fine pattern can be formed by means of a conventional resist equipment. |
