| 摘要 |
PURPOSE:To obtain the excellent contact of an electrode wiring with a substrate by placing an oxide film formed by a vapor-phase growing method intermediately when the electrode wiring formed of a high melting point metal or the silicate thereof is connected with the substrate of the semiconductor device of C-MOS type. CONSTITUTION:In a natural oxide film produced on the N type semiconductor substrate provided with a P type region are made windows which are made correspond to the region and the substrate respectively and the electrode wirings made of the high-mp metal or the silicate thereof are fitted thereto. The process is as follows. On the P type region and the N type substrate, both of which are exposed in the windows, the oxide films 5 and 4 of several tens of Angstrom thick are produced by the vapor-phase growing method and the electrode wirings are connected thereto. By this method, excellent contact is obtained through pinholes produced in the oxide films 5 and 4, while no exfoliation and crack are caused since a part of the oxide film is left unbroken. |
