| 摘要 |
PURPOSE:To execute a zero-defect treatment of a semiconductor substrate by coating the back surface of the substrate with a phosphorus-doping agent in a thin film state abd doping the phosphorus only on one side surface of an Si substrate using a laser beam, thereby absorbing a point defect in a high density phosphorus dispersed layer. CONSTITUTION:A germanium phosphide powder is dispersed in an Si organic compound liquid, the liquid is coated on the back surface of a P type Si monocrystalline substrate 11, and a thin layer 12 formed of the germanium phosphide and a silica is formed thereon. Subsequently, a nondoped silica film is coated thereon, and a silica film 13 is formed thereon. Then, an argon laser beam 15 is irradiated on the back surface of the substrate through the silica film, and a melting recrystallization reaction is taken place in the boundary between the germanium phosphide and the Si substrate, and a recrystallized layer 14 is formed. This layer 14 acts as a sink layer for absorbing a defect existing in the crystal of the substrate by an oxidation at high temperature higher than 1,100 deg.C with a number of defects. |
