| 摘要 |
PURPOSE:To enhance the accuracy of a pattern of an IC or LSI by coating a novolac series resist mask with a high sensitivity positive type regist pattern and patterning the resist film of a lower layer with the esist film of an upper layer as a mask. CONSTITUTION:A novolac series resist film 2 is coated on a semiconductor substrate 1, and a high sensitivity positive type resist film 3 is coated thereon. The film 3 is selectively evaporated and scattered by an electron beam exposure. Subsequently, with the positive type resist film as a mask the novolac series resist film is developed, and the exposed portion is selectively removed. Since the sensitivity of the novelac series resist film having preferable dry etching property is thus improved, the patterining accuracy of an IC can be thus improved. |
