| 摘要 |
PURPOSE:To enable integration of solder bump by forming a substance not moistened with solder on a final passivation film before molting the solder film, melting the solder in this state, and forming a solder bump thereon. CONSTITUTION:A final passivation film 12 of electrode 11 and oxide film is coated on the upper surface of a substrate 10 made of semiconductor thin plate, a wiring layer 13 is formed thereon. The lower layer of the wiring layer is made of titanium layer 14 or the like which is not moistened with solder, and the upper layer is formed of a copper layer 15 of the like which is preferable adherence to the solder. A solder film 17 is formed at the window having the same size as the electrode 11 formed by photoetching. Subsequently, the photoresist film 16 is removed, is heated in the state that the copper layer 15 is removed, and a solder bump 18 is thus formed. Thus, when the solder is heated, the solder flowed to the titanium layer 14 is reduced, and the solder bump can be consequently integrated highly. |
