发明名称 |
VERFAHREN ZUM HERSTELLEN VON FELDEFFEKTTRANSISTOREN |
摘要 |
The present invention provides a silicon gate FET and associated integrated circuit structure in which a second level of polysilicon is selectively oxidized to provide insulating regions where desired. Regions of the polysilicon which were not oxidized are suitably doped to function as electrical interconnects to the source and drain regions in the substrate and to the gate. In the preferred embodiment, a metallic interconnection is made between the gate and drain or source region with the second level of polysilicon. |
申请公布号 |
DE3031708(A1) |
申请公布日期 |
1981.05.14 |
申请号 |
DE19803031708 |
申请日期 |
1980.08.22 |
申请人 |
HEWLETT-PACKARD CO. |
发明人 |
FU,HORNG-SEN;L. MOLL,JOHN;MANOLIU,JULIANA |
分类号 |
H01L21/285;H01L21/336;H01L21/768;H01L29/417;H01L29/49;H01L29/78 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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