发明名称 MANUFACTURE OF SILICON BY CRUCIBLEEFREE ZONE MELTING
摘要 Method of producing silicon by crucible-free zone melting a substantially vertically held silicon rod with which a melting zone, produced by an induction heating coil which, together with an oscillating-circuit coil connected in series therewith and determining the oscillating-circuit frequency and having a high inductance in comparison with that of the induction heating coil heating up the rod material, forms the inductive component of a heating parallel oscillating circuit fed by a high-frequency generator and has a heating circuit capacitor connected in parallel with the heating coil, is passed through the silicon rod in direction of the rod axis, which comprises dimensioning the component resonance circuit formed by the induction heating coil and the heating-circuit capacitor to a frequency deviating by less than a factor of 2 from the frequency of the high-frequency generator.
申请公布号 JPS5654298(A) 申请公布日期 1981.05.14
申请号 JP19800132249 申请日期 1980.09.22
申请人 SIEMENS AG 发明人 UORUFUGANGU KERAA;HANSUKURISUCHIAN GURASUMAN;KAARU SHIYUMITSUTO
分类号 C30B13/20;C30B29/06;H01L21/208;H05B6/04;H05B6/30 主分类号 C30B13/20
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