发明名称 |
CRYSTALS AND THE MANUFACTURE THEREOF |
摘要 |
Three-dimensional structures having a suitable geometrical configuration are directly formed on one major surface of a substrate so that an epitaxial molecular beam may be incident on preselected regions, and the angles of incidence of epitaxial molecular beams are varied. As a result the arrival rates of molecular beams are varied from one region to another on the substrate so that a three-dimensional epitaxial layer in which the physical properties are different from one region of a submicron across to another may be grown. |
申请公布号 |
GB1589455(A) |
申请公布日期 |
1981.05.13 |
申请号 |
GB19770029739 |
申请日期 |
1977.07.15 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD |
发明人 |
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分类号 |
C30B23/02;C30B23/04;H01L21/203 |
主分类号 |
C30B23/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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