| 摘要 |
PURPOSE:To keep the potential across a diode constant by covering the portions other than the electrode leading section of a resistance with a region having the same conduction type and impurities concentration as that of the cathode region of a diode when the Zener diode and the resistance are formed in the same semiconductor substrate. CONSTITUTION:A resistance 2 is connected to the cathode side of a Zener diode 1 to make an IC. A power source 10 is connected between the anode side of a diode 1 and other terminals of the resistance 1 while a load resistance 3 is connected between the cathode side and the anode side of the diode 1 whether it may be inside or outside the IC. In such an arrangement, a P<+> type anode region 5 of a diode 1 is formed by diffusion in an N type epitaxial layer 4 which is grown in the P type semiconductor substrate. An N<+> type cathode region 7a is provided in the layer 4 while a resistance 2 is formed by diffusion in the same layer 4 as a P type region 6 like a belt. At this point, the portions other than a window 8 for leading the electrode 9 on the region 6 is covered with an N<+> type diffused region 7b the impurity concentration thereof is the same as that of the region 7a. |
