| 摘要 |
PURPOSE:To improve the reliability and the performance of the compound semiconductor device with lowering of heat resistance by applying Au to the back of a GaAs pellet through at least one of Pt, W and Mo. CONSTITUTION:Ti 5, Pt 6 and Au 7 are continuously evaporated on the ground back of a GaAs substrate 4 having a source, a gate and a drain electrode 1-3 on the surface. The substrate is separated into pellets 8. While a case 9 is heated, the back of the pellets 8 is placed on an AuSi solder 10 fused in N2 until they are broken in sufficiently and then fixed in the case after cooled. Each electrode and the case 9 are connected and sealed with a ceramic cover. This enables more effective dissipation of heat them it would when the back is made of Au alone thereby significantly easing adverse effect on the micro wave characteristics and the reliability of a GaAs FET due to heat. |
