Negative type deep ultraviolet resist

摘要

A negative type resist is provided for deep ultraviolet light lithography. This resist comprises a polymer of a diallyl ester of a dicarboxylic acid having a degree of dispersion of 3 or less, which is given by the ratio of a weight-average molecular weight Mw to a number-average molecular weight Mn. This deep UV resist can produce a fine detail resist pattern having a high resolution, and it has a high sensitivity to irradiating the coated film of the polymer on a substrate with deep UV light followed by development.