发明名称 |
Process for diffusion of aluminum into a semiconductor |
摘要 |
A process for the diffusion of aluminum into a semiconductor is disclosed. A piece of elemental aluminum used as a diffusion source is placed on a boat of a refractory metal and heated together with a semiconductor substrate in an evacuated sealed tube for diffusing aluminum into the semiconductor substrate. The semiconductor substrate having aluminum diffused therein is then subjected to heat treatment in an atmosphere of oxygen or nitrogen for a required length of time at a temperature higher than that used for the thermal diffusion. The above process provides the desired diffusion profile of aluminum, and a long lifetime of minority carriers in the substrate.
|
申请公布号 |
US4266990(A) |
申请公布日期 |
1981.05.12 |
申请号 |
US19790088136 |
申请日期 |
1979.10.25 |
申请人 |
HITACHI, LTD. |
发明人 |
MOMMA, NAOHIRO;TANIGUCHI, HIROYUKI |
分类号 |
H01L21/223;H01L21/225;(IPC1-7):H01L21/22 |
主分类号 |
H01L21/223 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|