| 发明名称 |
Enhanced open circuit voltage in amorphous silicon photovoltaic devices |
| 摘要 |
An amorphous silicon photovoltaic device having enhanced photovoltage and increased longevity is produced by treatment of a barrier forming region of the amorphous silicon in the presence of a partial pressure of sulfur dioxide.
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| 申请公布号 |
US4266984(A) |
申请公布日期 |
1981.05.12 |
| 申请号 |
US19790099421 |
申请日期 |
1979.12.03 |
| 申请人 |
EXXON RESEARCH AND ENGINEERING COMPANY |
发明人 |
WRONSKI, CHRISTOPHER R.;MYERS, BRUCE P. |
| 分类号 |
H01L31/04;H01L21/205;H01L31/0392;H01L31/07;H01L31/18;H01L31/20;(IPC1-7):H01L31/04 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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