Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer

摘要

A process for patterning regions on a semiconductor structure comprises the steps of forming a first layer of an alloy of tungsten and titanium on the semiconductor structure, forming a conductive layer of aluminum or chemically similar material on the surface of the tungsten-titanium alloy, removing the undesired portions of the conductive layer by etching with a plasma and removing the thereby exposed portions of the tungsten-titanium alloy layer by chemical etching.