| 摘要 |
PURPOSE:To permit the carrier density to be accurately controlled by using an organic Cd compound having volatility as a P type dopant. CONSTITUTION:To provide a compound semiconductor epitaxial film of a III b group element and a V b group element on a monocrystalline substrate surface by vapor growth, an organic Cd compound having volatility is used as a P type dopant. As the organic Cd compound, a dialkyl compound R2Cd (R: alkyl group) is suitable. Said method permits a P type layer of a low carrier density to be reproducibly obtained even if a comparatively large quantity of R2Cd is supplied. This is because Cd has a small segregation coefficient. Moreover, because Cd has a small diffusion constant, the carrier density steeply varies, and therefore the P-N junction width and the like can be made extremely smaller. |
