发明名称 EVAPORATION SOURCE AND ION SOURCE FOR DOWNWARD VAPOR DEPOSITION AND ION PLATING
摘要 PURPOSE:To facilitate the vapor deposition or ion plating of small work or easily deformable work so as to improve the productivity, by enveloping molten metal to be evaporated with high temp. material, and by releasing the evaporated metal through an opening provided at the lower part. CONSTITUTION:A projecting part 2 is formed at the center of the inside of a crucible 1, which is used as a container for ion source. A lid 6 is fixed to the opening at the upper end of the crucible 1. Molten metal 7 to be used for vapor deposition is filled in the crucible 1 and is heated with the heat of filaments 8, 9 and with activity of ionized low velocity electron beam, hereby the molten metal 7 is ionized. When the crucible is filled with metallic vapor and the vapor pressure of the metallic vapor becomes higher than the outside pressure, the vapor passes through the upper end of the nozzle 4 and the hole 3 and is sprayed downward. Electron beam generated by the filament 10 provided under the nozzle 4 acts on the sprayed vapor thereby ionizing a portion of the vapor.
申请公布号 JPS5651573(A) 申请公布日期 1981.05.09
申请号 JP19790128631 申请日期 1979.10.05
申请人 MATSUMOTO SEIKI CO LTD;OONAKA ITSUO;KURI KIYOTOSHI 发明人 MATSUMOTO SHIYOUJI;OONAKA ITSUO;KURI KIYOTOSHI
分类号 C23C14/24;C23C14/32 主分类号 C23C14/24
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