| 摘要 |
PURPOSE:To permit an impurity atom concentration profile to be uniformed and an excellent active region without striation to be formed by selectively applying a laser or electron beam to a part to be an active region on a semiconductor substrate to fuse on heating. CONSTITUTION:A p type InSb monocrystalline substrate 12 having striation 11 is made from an InSb crystal ingot. Laser beams are applied to portions to be active regions on the substrate 12 to fuse and recrystallize for forming active regions each having a uniform impurity atom concentration profile. After Si ions are implanted into each region 13, a junction 14 shallower than the region 13 is formed by heat treatment. Then a lead wire 15 is connected to each junction 14 to prepare a semiconductor device having a photovoltaic element 16. Because the region 13 of the semiconductor device thus obtained has a uniform impurity atom concentration profile, a depletion layer 17 has no striation 11. Therefore, the carrier life is improved, and excellent element-characteristics can be obtained. |
