| 摘要 |
PURPOSE:To permit a bevel-type semiconductor element to be glassivated by performing glassivation with bevel-type semiconductor elements maintained as a wafer by means of glass layers until the last process. CONSTITUTION:A bevel-type semiconductor element is formed on a semiconductor substrate 1 being a wafer. After emitter and base electrode openings 8 and 9 are made in a thermal oxide film 6 on one main surface of the substrate 1, a thick glass layer 10 is formed. Then the substrate 1 is bevel-etched from the other main surface. The bevel etch is performed until etching grooves 12 reach one main surface of the substrate 1. Pellets separated by the bevel etch are maintained as a wafer by means of the layer 10. Then each bevel surface is coated with a glass layer 13, and an electrode 14 is formed on the other main surface of the substrate 1. Each groove 12 is filled with glass layer 15. Then the layer 10 is removed, and base and emitter electrodes 16 and 17 are formed. After that, the glass layer 15 are removed to separate the pellets into pieces. |
