| 摘要 |
PURPOSE:To obtain a high-sensitivity diode with a high nondefective rate by forming a shallow PN junction on most of the regions on the surface of a semiconductor crystal substrate when the light recieving diode is made wherein a PN junction having double depth or more is provided on a region for ohmic electrode installation. CONSTITUTION:A shallow P type layer 2 having about 0.5mum of depth for high light recieving sensitivity is formed by diffusion on an N type Si substrate 1 by surrounding the layer 2 with an oxid protective film 3. A deep P type region 6 having about 2mum of depth is formed by diffusion on a part of the layer 2 and the area of the region 6 is limited to the whole area of 1% or less. An Al electrode 4 is installed on the region 6. Next, an N<-> type layer 5 is formed on the back of the substrate 1 to compose of a diode. In this way, a PN junction produced by the layer 2 will not be damaged because the electrode 4 directly installed on the thin layer 2 as a general rule has now been formed through the thick region 6. And a nondefective rate at the time of diode manufacture will be increased. |
