| 摘要 |
PURPOSE:To operate a channel for information reading at a high speed by forming the channel for information reading providing on an IGFET in a vertical direction to the surface of a semiconductor substrate wherein channel length, a channel resistance and propagation time are reduced. CONSTITUTION:A deep insulating layer 15 is formed in the P type Si substrate 1 to form the substrate 1 in an insular shape and N<+> type regions 2 and 2' are formed by diffusion in the insular-shaped substrate 1. A gate insulating film 3 is formed from the exposed surface of the substrate 1 through the regions 2 and 2' and a gate electrode 4 is installed on the film 3. In this construction, the resion 2' has the same depth as for the insulating layer 15 and the region 2 is shallowly provided. A P<+> type region 51 having the same depth as for the region 2 and a P<+> type region 41 are formed by diffusion on the surface layer section in the substrate 1 between the insulating layer 15 and the region 2' and by opposing to the lower section of the region 2' respectively. In this way, a space charge layer 6 is produced around the region 2' and a short length channel 7 for information reading is produced between the layer 6 and the insulating layer 15 in a vertical direction to permit high-speed operation. |
