SEMICONDUCTORRMEASURING APPARATUS

摘要

PURPOSE:To permit the temperature characteristics of a semiconductor element to be accurately and speedily measured by applying a laser beam to the surface of a semiconductor element to be measured. CONSTITUTION:A bias generating circuit 2 is actuated to apply a DC voltage to the oxide film of a semiconductor element at an arbitrary position in a wafer 1, and a shutter 5 is opened to apply a laser beam to the element surface. In the wafer 1, only the semiconductor element to whose surface the lase beam has been applied is heated. Because the laser beam is applied to only one portion of the wafer 1, the temperature of the irradiated portion rapidly rises, as well as the temperature can be accurately controlled. Measuring the capacity by using a capacity meter 3 while heating the semiconductor element permits the contamination degree to be quantitatively measured in a short time.