MANUFACTURE OF COMPLEMENTARY TYPE MOS TRANSISTOR

摘要

PURPOSE:To obtain a high-concentration diffusion region without causing any influence on the others by providing a PSG film prescribing for mole ratio on the surface of a substrate when forming the source and the drain regions of a transistor by diffusion wherein a selective etching is applied to the PSG film by using a hydrofluoric aqueous solution prescribing for composition. CONSTITUTION:A P<-> type region is formed by diffusion on the predetermined region of an N type substrate 7. Thick field oxide films 8 are formed by locating around the circumference of the substrate 7 and on borders between the P<-> type region and the substrate. A gate oxide films 11 with predetermined shape are provided on the surface of the substrate 7 surrounded by the films 8 and poly- crystalline layers 10 are formed on the films 11. Next, a low temperature PSG film 9 having 0.1-0.3 (PH3/SiH4) by mole ratio is formed on the whole surface and the removal of etching is applied to an NMOS transistor formation section by a hydrofluoric aqueous solution of 0.1-0.5%. Then, the remaining film 9 is used as a mask and an N<+> type source region and drain region 13 are formed in the P<-> type region by ion implantation. P<+> type region 14 is formed in the substrate 7 by renewing the film 9.