发明名称 VAPOR DEPOSITING METHOD
摘要 PURPOSE:To heat vapor depositing material uniformly and to prevent the scattering of the material, by mixing powdered vapor depositing material with metallic powder which causes no chemical reaction at the subliming temp. of the vapor depositing material, and by heating the mixture contained in a boat for vapor depositing source. CONSTITUTION:Vapor depositing material 2 such as WO3, SiO2, ZnS of particle size not coarser than 400 mesh is mixed with high melting metal such as tantalum 3 of particle size of 150 mesh in a volume ratio 5:1, and is placed in a boat 1 for vapor depositing source. When the boad 1 is heated, the vapor depositing material powder 2 is heated uniformly because of the tantalum 3 powder having high heat conductivity. On the other hand the scattering of vapor depositing material powder 2 which does not attain the subliming temp. is prevented because the powder 2 is restrained by the weight of the tantalum powder 3.
申请公布号 JPS5651570(A) 申请公布日期 1981.05.09
申请号 JP19790124785 申请日期 1979.09.29
申请人 CLARION CO LTD 发明人 SATOU KAZUO;YASHIRO MASAAKI
分类号 C23C14/24 主分类号 C23C14/24
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