摘要 |
PURPOSE:To obtain the suitable light sensitive element for the printer or the like by providing plural P layer zones on one side of a semiconductor thin piece while separating the P layer zones by an insulating layer and lead wires are taken out by forming any pattern conductive layer on the whole surface of a wafer. CONSTITUTION:Plural P layers 8 are formed on one side of the Si wafer 7 by a photoresist method and a resist 11 is applied on the whole surface of the wafer 7. A mask 12 having smaller openings 13, 14 than the P layer 8 is provided on the resist 11. Next, the resist 11 is left in the openings 13 and 14 only by exposure, development and washing with water. And the exposed surface of the wafer 7 is changed into an SiO2 film 15 by thermal treatment to form a conductive layer 16 such as Al or the like on the whole surface. Then, a resist 17 pattern is again formed to remove the unnecessary part of the layer 16 by etching and the remaining layer 16 is divided into plural zones 21-23 by using the exposed film 15 as an electrical border section 19. Next, these zones are cut to compose a substrate for a light sensitive element and predetermined lead wires are installed. |