| 摘要 |
<p>PURPOSE:To facilitate the modification of circuit constitution by providing a wiring layer for programming a circuit comprising a semiconductor layer wherein two low resistance parts oppose each other with a high resistance part being provided in- between on an insulating film on the surface of a semiconductor substrate, and reducing the resistance of the high resistance part. CONSTITUTION:On an SiO2 layer 8 on the surface of an Si substrate 9, n<+> type polycrystal layers 5 and 7 are arranged so that they oppose each other with a high resistance polycrystal Si layer 6 being provided in-between, thereby a wiring for programming is constituted. Diffusion is performed from the n<+> type low resistance layers 5 and 7 by irradiating a laser spot or an electron beam spot and giving the energy, thereby the high resistance layer 6 is converted into low resistance layer 11. In this method, the n<+> type layers 5 and 7 which have been in the nonconductive state before irradiation become the conductive state after the irradiation, and the programming wiring under the nonactive state becomes the active state. Therefore, the programmable IC can be readily formed, and ROMs, programmable logic arrays and the like can be readily constituted.</p> |
