| 摘要 |
PURPOSE:To control the characteristics of a transistor body by forming the emitter diffusing depth and impurity distribution of a monitor transistor in the same manner as those of the transistor body, thereby improving the correlation of the characteristics of both the transistors and reducing the irregularity of the transistors. CONSTITUTION:In a transistor body 1, a reverse conductivity type base diffused region 4 is formed on a one conductivity type substrate 3, and one conductivity type emitter diffused region 9 is formed from a diffused window 6. Similarly, in a monitor transistor 2, a base diffused region 5 and an emitter diffused region 10a are formed in the substrate 3. The windows 6 of the transistor body 1 are used as line source, and the windows 7a of the transistor 2 are aligned in multiple number in width generally equal to the minimum width of the windows 6 at an interval shorter than the twice of the emitter diffusing depth XjE. Accordingly, the diffusing depth and impurity distribution of both the emitter regions 9 and 10a may become almost the same. |
