| 摘要 |
PURPOSE:To reduce consuming power by applying a complementary MOSFET to the periphery circuit of IC of N channel double polysilicon floating gate MOSFET (N-FAMOS). CONSTITUTION:When using an N type substrate a parasitic bipolar transistor produces between the substrate and a diffusion layer 3 liable to latch up. Consequently a P type substrate is used. For further preparing a P type FET in the diffusion layer 4 and making the threshold voltage about 0.5-1.5V it relates to a density condition of the diffusion layer 3. For this reason the P type substrate specific resistance is selected to be above 40OMEGAcm. Next in respect of surface density P layer 2 of 1X10<15>-2X10<16>, P layer 3 of 1X10<16>-3X10<16>, N layer 4 of 1X 10<14>-2X10<15> are prepared and on N layer 2 N type FET is formed, on N layer 3 N-FAMOS, on P layer 4 P type FET are formed thus N-FAMOS and C-MOSFET can be obtained on the same substrate moreover with remarkably small power consumption. |
