| 摘要 |
PURPOSE:To improve the mechanical strength and bonding strength of an Si chip to a pad by a constitution wherein a bonding wire contains Au and Pt with the predetermined purity and composition and a very small amount of at least one of Be, Ca and Ge with a predetermined content. CONSTITUTION:A bonding wire for a semiconductor device is formed by adding 1-30W/O of high purity Pt with the purity not less than 99.9W/O to high purity Au with the purity not less than 99.99W/O. Then, at least one of Be, Ca and Ge is added to thus obtained Au and Pt by 0.0003-0.05W/O in total amount, as required. By so doing, it becomes possible to obtain the bonding wire superior in the mechanical strength, particularly in the fructure strength at the bonding time, and increase the tensile strength in the state after an Si chip is bonded to a pad. Thus, a diameter of the bonding wire can be reduced to several tens mum to form a very fine wire and the size of the pad can be also reduced. |
