| 摘要 |
PURPOSE:To obtain a high response speed infrared-ray detecting element by a construction wherein the capacity and sheet resistivity of an Hg1-XCdXTe P-N junction are lowered so that most of the photons are absorbed in a P type crystal layer. CONSTITUTION:An N type Hg1-XCdXTe 1 is heated to extract Hg and to make a P type substrate 2. Then ZnS 3 is deposited on the substrate and an opening is made in the layer 3 to diffuse Hg. An N layer 4 is formed by filling up the empty grid of the substrate 2 to selectively form a P-N junction 5. In addition, an N<+> layer 6 is formed by injecting B ions in order to obtain a double layer. With such a construction as this, the sheet resistivity of the P type substrate is lowered because of the N<+> layer 6, while the junction capacity is made smaller because a depletion layer is provided in the P-N junction. If the double layer consisting the layers 4-6 is allowed to have a thickness of about 3mum, infrared-ray photons to be injected can be fallen on the P layer which is almost nearly fast as carrier transferring, so that a high response speed infrared-ray detecting element can be obtained. |
