| 摘要 |
PURPOSE:To prevent the element destruction at the transient time by a method wherein in GTOSCR of P1N1P2N2 constitution the N2 layer is provided with a groove to be divided in to two parts detecting GTO current and automatically controlling at the time of excess. CONSTITUTION:An N2 layer is divided into 3a, 3b by a groove 7. On the layer 3b the comblike gate electrodes 4a, 4b are prepared around the electrode 9, the layer 3a. Through the groove 7a resistance layer 10 is produced. When a load current exceeds the rating, the current is controlled by the gate inverse voltage flows through a resistance layer 10. The resulting voltage drop is detected by a detector 11 of high inpedance between the electrode 9-6, breaking a signal and transmitting it to the source 12 of the inverse bias source switch 2 and further to the source 14 to turn the transistor 13 ON removing the inverse bias source 1 in a short time. In this way the extinction working of GTO is momentarily changed to the ignition working and thereafter in a usual overcurrent protection from GTOSCR is protected from an overcurrent to prevent destruction. |
