| 摘要 |
A Schottky-barrier gate gallium arsenide field effect structure is made using a self-aligned gate fabrication technique. The resulting device includes source and drain regions, which are parts of a conducting channel formed through ion implantation or epitaxial growth or a combination of the two. A gate is formed on the same channel by first etching a portion of the channel between the source and the drain regions to form a gate window which then receives a Schottky-barrier gate electrode.
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