| 发明名称 |
N-CONDUCTIVITY SILICON MONOCRYSTALS PRODUCED BY NEUTRON IRRADIATION |
| 摘要 |
<p>A method for producing homogeneously doped silicon monocrystals, with n-conductivity and adjustable dopant concentration, by the irradiation of silicon monocrystals with neutrons, starting with a pre-doped p- or nconducting crystalline material having optional concentration fluctuation both radially and axially.</p> |
| 申请公布号 |
CA1100390(A) |
申请公布日期 |
1981.05.05 |
| 申请号 |
CA19740215114 |
申请日期 |
1974.12.03 |
| 申请人 |
SIEMENS AKTIENGESELLSCHAFT |
发明人 |
REUSCHEL, KONRAD;SCHNOELLER, MANFRED;MUEHLBAUER, ALFRED;SPENKE, EBERHARD;KELLER, WOLFGANG |
| 分类号 |
C30B31/20;G21G1/06;H01L21/261;(IPC1-7):01J17/34 |
主分类号 |
C30B31/20 |
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