| 摘要 |
<p>PURPOSE:To check the occurrence of an oxide film or slag by controlling the saturation of solute immediately before contacting a substrate with the lowest temperature part of a fusing solution providing temperature difference. CONSTITUTION:The lowest temperature part 4 of a Ga fusing solution contacts a GaAs source substrate 5 until just before the beginning of epitaxial growth. Therefore, the Ga fusing solution is always clean and the growth to the GaAs substrate 5 maintained at the same temperature with a GaAs substrate 1 is adjusted by melt back even if the diffusion flow of As in the Ga fusing solution 3 causes excess and deficiency by a difference in holding time. Therefore, the As concentration at the lowest temperature part 4 of the Ga fusing solution at the time immediately before the beginning of growth exactly becomes the saturation concentration at a substrate temperature. Furthermore, with source GaAs installed at the upper and lower parts of the Ga fusing solution, the time requiring to saturate the concentration to a predetermined concentration will remarkably be reduced. The same effect with single layer growth will be obtained by contacting the source substrate with the lowest temperature part of each fusing solution for temperature difference multilayer growth using two or more fusing solutions.</p> |
