| 摘要 |
PURPOSE:To efficiently analyze faults by automatically detecting the area of the faulty part in a semiconductor device by input and output signals wherein the distribution of potential is measured by scanning pulse electron beams which are generated repeatedly. CONSTITUTION:A pattern signal 2 is sent to a semiconductor device 3 from a computer 1 and the computer 1 detects a faulty part by an output signal 4 to send a control signal 6. The scanning range of pulse electron beams 8 is controlled by generating 5 a signal to a scanning coil 7 by the signal 6. Electron beams 13 are converted into 10 pulses by the control current 11 from the computer 1. The beams 8 are emitted by synchronizing with the predetermined phase of the semiconductor device 3 which are repeatedly operated by the pattern signal 2. Energy distributing secondary electrons 14 influenced by the surface potential of the device 3 are detected 15 and amplified 16 to send a luminous signal 18 to a CRT 17 and the surface distribution of potential will be measured by using a scanning signal 19 at the same time. Furthermore, the timing of beam 8 emission is controlled to measure the hourly variations in the distribution of potential. In this composition, IC fault analyses will be available. |
