| 摘要 |
PURPOSE:To conform the temperature coefficient of a resistance element to that of an external metal coating resistor connected to it, when forming the resistance ele- ment consisting of polycrystalline silicon on the same semiconductor substrate on which an IC is provided, by controlling the temperature coefficient of the resistance value of the element with the value of the layer resistance of the polycrystalline silicon. CONSTITUTION:On a P type silicon substrate 1, an N type buried region 2 is diffu- sion formed, and all over the surface including the region, an N type layer 3 is epitaxially grown, and the layer 3 is divided into islands with plural P<+> type insulating and separating regions 4. Next, in an island region including the region 2, a P type base region 5 is diffusion formed, and in the region, an N<+> type emitter region 6 is formed, and neighboring the region 5, an N<+> type ohmic connecting region 7 is diffusion formed. Then the entire surface is covered with an insulating film 10, and above another island region, a polycrystalline silicon resistance element 8 is grown via the film 10 and connected to the region 6 with aluminum wiring 9. In this construction, the layer resistance of the polycrystalline silicon is selected to 70- 150OMEGA/square to match with an external resistor. |
