| 摘要 |
PURPOSE:To simply measure alpha-ray energy dependence on misoperation by installing a moderator film on an alpha-ray path located between an alpha-ray source and a semiconductor chip wherein the thickness, the number and the quality of films are selected. CONSTITUTION:The inside of a bell jar 10 forms vacuum exhaustion. A tested semiconductor chip 13A is held 13 under an alpha-ray source 12 by reserving a distance L and an alpha-ray detection element 14 is stationed at nearly same plane level. Holders 15 are provided at the alpha-ray path located between the alpha-ray source and the chip 13A to hold a moderator film with free removability. The thickness, the number and the quality of films are properly changed. Right or error is judged 16 by driving circuit elements in the chip 13A while measuring 17 the intensity of alpha-ray energy to the surface of the chip. In this composition, the intensity of the alpha-ray energy will be changed by a simple and practical method. |
