| 摘要 |
PURPOSE:To unit a resistor and a transistor and increase the degree of integration by separating the emitter electrode of the transistor formed on the surface of a semiconductor substrate into a main electrode and a detection electrode and providing a semiconductor resistor layer between the main electrode and an emitter region. CONSTITUTION:In an N type Si substrate 1 which becomes a collector region, a P type base region 2 is diffusion formed, and in the region, an N<+> type emitter region 3 is made, and thus a power NPN transistor is formed. Next, a window is made in an insulating film that covers the entire surface, and then a base electrode 4 is attached to the region 2, a terminal C to the back face of the substrate 1, an emitter electrode to the region 3, and when doing so, the emitter electrode is divided into a main electrode 5 and a detecting electrode 7, a semiconductor resistor layer 6 contacting the region 3 is interposed under the electrode 5, and the electrode 7 is made into a small area one positioning at the end of the region 3. Then a terminal E provided for the electrode 5 is connected to the emitter of the second transistor T2 for wideback, its collector is connected to the electrode 4 and its base is connected to the electrode 7. |
