| 摘要 |
PURPOSE:To make possible to measure the characteristics of a high impedance element easily by connecting a measured multielement semiconductor device with a field effect semiconductor device and measuring the photocurrent of the measured element together with its voltage-current characteristics. CONSTITUTION:A measured multielement semiconductor device 1 works as a constant current element between the source and earth of an MOSFET2. And the drain current of the FET2 is equal to a current value flowing in the element 1. Therefore, observing the drain current of the FET2 by an ammeter 4, the voltage of a DC power source 3 is changed. On the other hand, voltage between both ends of the element 1 is measured with a voltmeter 5. From the voltage and current of the element 1 so measured, a characteristic curve can be obtained. And from this characteristic curve, the impedance of the element 1 can be found easily. If the voltage-current characteristics are measured in a state where light of a definite intensity is projected from a standard light source, a photocurrent value in a required bias state can be obtained. From this value and the impedance of the element 1, a detecting rate can be determined. |
