| 摘要 |
PURPOSE:To dispence with thermal process after a film is formed so as to obtain a high critical temperature by forming a vapor deposition layer on a basic plate, and by oxidizing the vapor deposition layer in an oxidizing gas atmosphere. CONSTITUTION:Chambers 14, 15 are partitioned by a partitioning wall 9 having an opening 11 in a vacuum chamber 1, in which chamber 14 a vapor deposition source 8 is arranged while in which chamber 15a basic plate 7 is opposed to the opening 11 and into which chamber 15 oxidation gas is introduced by means of an introducing means 10. A vapor deposition layer is formed by depositing a vapor generated by the source 8 on the plate 7, which plate 7 is moved within the chamber 15 in an atmosphere having large inclusion amount of oxidation gas and then the deposition layer of the plate is oxidized. It is thus possible to oxidize a film generated without preventing generation and deposition of vapored particles on the basic plate so as to produce an oxide superconducting thin film without thermal process after the film is formed by increasing oxidation gas pressure in the chamber 15 only. |
