Programmable read only memory mfr. - forming two groups of conductive strips, mutually perpendicular and insulated and doped zones for memory cells using mos techniques

摘要

The process is used for production of a programmable MOS semiconductor memory with a number of memory cells with floating gate electrodes. A first group of spaced, parallel polysilicon strips (18) are formed in a manner insulating them from the substrate (14). Between these strips are doped aligned elongated zones (22). A second group of strips (26) is formed in a manner insulated from the first strip and the doped zones. The second strips intersect the first and the doped zones in a tranverse direction. The first strips have regions aligned with the second strips and are etched to form the floating gate electrodes. These electrodes are formed each between two adjacent doped zones, formed underneath the second strips and insulated from them. The doped zones form bit-conducting zones with periodic arrangement of bit line contacts.