发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To attain low electric power consumption, small capacity and low cost while making high-speed operation possible by stabilizing the circuit operation, by providing a dynamic sense amplifier with a write-only circuit. CONSTITUTION:One digit line connected to dynamic digit sense amplifier SA is connected to an I/O bus via switching circuit S controlled by line decoder Y. Driving circuit W is provided which operates with a write signal to memory cell MC to generate an output of a high potential with an input at a low potential and to output a low potential with the input at a high potential (or increase its output resistance). Then, the digit line connected to input switching circuit S of driving circuit W is connected to the digit line which is not connected to switching circuit S at its output. Therefore, stable driving operation is carried out.
申请公布号 JPS5647988(A) 申请公布日期 1981.04.30
申请号 JP19790121365 申请日期 1979.09.20
申请人 NIPPON ELECTRIC CO 发明人 NAKAO MASUMI
分类号 G11C11/417;G11C11/409;G11C11/4096;H01L21/822;H01L21/8234;H01L21/8242;H01L27/04;H01L27/06;H01L27/10;H01L27/108 主分类号 G11C11/417
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