High-frequency field effect semiconductor device and transistor using such a semiconductor device.

摘要

1. A normally blocked high-frequency field-effect transistor having an elevated output resistance, and comprising, supported by a semi-isolating substrate (1), a control region constituted by an active layer and a grid layer forming a heterojunction, said device being characterized in that the heterojunction is formed by a slightly p-doped gaAs active layer (2) and a n-type doped Alx Ga1-x As layer acting as a grid, a load-inverting zone (12) with high electronic mobility being formed in the p-type active layer (2) near said heterojunction when a positive voltage is applied to the Alx Ga1-x As grid (3), whereas said inverting zone does not exist in the absence of such polarization.