| 摘要 |
<p>A charge transfer device includes an active layer 4 of semiconductor material providing charge transfer channel means and supported on a support substrate, a lower array of gate electrodes 15 between the active layer and the support substrate for sampling or controlling charge transfer within the transfer channel means, and lower pulse receiver conductors associated with the lower gate electrodes for reception of phase clocking pulses. The device is made by the steps of forming an active layer of semiconductor material on the surface of a temporary substrate, forming an array of lower gate electrodes over the surface of the active layer, applying a support substrate to the surface of the active layer carrying the lower electrode array, and removing the temporary substrate. An upper array of gate electrodes may be formed on the surface of the active layer revealed by removing the temporary substrate and a double channel structure may be formed by having an active layer comprising a plurality of semiconductor layers. <IMAGE></p> |
